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| Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0135, -0136 Features * Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 1.2 GHz * High Gain: 18.5 dB Typical at 0.5 GHz * Unconditionally Stable (k>1) * Cost Effective Ceramic Microstrip Package purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0136. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0135 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9691E 6-250 MSA-0135, -0136 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,5]: jc = 150C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.7 mW/C for TC > 170C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. MSA-0135, -0136 Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 17 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 0.6 GHz Units dB dB GHz Min. 18.0 Typ. 19.0 0.6 1.2 1.3:1 1.3:1 Max. dB dBm dBm psec V mV/C 4.5 5.5 1.5 14.0 160 5.0 -9.0 5.5 Notes: 1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. 6-251 MSA-0135, -0136 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 17 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .08 .08 .08 .08 .09 .09 .11 .11 .11 .09 .08 .12 .18 .21 .23 .27 158 134 116 97 83 68 47 27 -18 -62 -114 -158 178 163 145 125 19.1 18.9 18.7 18.5 18.2 17.9 17.2 16.5 14.6 12.8 11.3 10.0 8.7 7.5 6.4 5.5 9.01 8.84 8.65 8.40 8.13 7.84 7.25 6.64 5.37 4.38 3.67 3.15 2.72 2.37 2.10 1.88 172 165 157 150 143 136 125 113 90 70 58 43 28 15 2 -10 -23.0 -22.4 -22.5 -22.2 -21.7 -21.6 -20.7 -19.9 -18.3 -16.8 -16.1 -15.0 -14.5 -14.0 -13.4 -13.2 .071 .076 .075 .078 .082 .083 .092 .101 .122 .144 .157 .177 .189 .200 .213 .220 3 6 12 13 16 17 22 23 27 24 24 20 14 9 4 -2 .07 .07 .07 .07 .07 .07 .07 .07 .06 .05 .03 .03 .05 .10 .14 .15 -2 -10 -10 -15 -17 -21 -30 -34 -34 -39 -61 -67 -88 -92 -99 -102 A model for this device is available in the DEVICE MODELS section. MSA-0135, -0136 Typical Performance, TA = 25C (unless otherwise noted) 21 18 Gain Flat to DC 15 G p (dB) 25 TC = +125C TC = +25C TC = -55C G p (dB) 25 0.1 GHz 0.5 GHz 1.0 GHz 15 2.0 GHz 10 20 20 12 9 6 I d (mA) 15 10 5 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 1 2 3 Vd (V) 4 5 6 5 0 10 15 20 I d (mA) 25 30 Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 17 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. G p (dB) 20 18 16 8 NF 6 GP P1 dB (dBm) 6 I d = 20 mA 4 7.0 6.5 I d = 17 mA NF (dB) I d = 13 mA I d = 17 mA I d = 20 mA 8 6 NF (dB) 2 6.0 P1 dB (dBm) 4 2 0 -2 -55 P1 dB 4 2 0 I d = 13 mA 5.5 -2 -25 +25 +85 +125 -4 0.1 5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) TEMPERATURE (C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.5 GHz, Id = 17 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-252 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 1 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 A01 RF INPUT 6-253 |
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